- 레이저다이오드 | Laser Diode > LD (CHIP, TO, BAR)
Product |
808nm 80 W Diode laser Vertical stacks -. AuSn solder for packaging -. Compact design -. High peak power density -. High reliability |
|
Application |
-. Pumping source -. Scientific research |
|
Download |
Product Info
Product Parameters
Optical Parameters | ||
Part Number | R808±3-Q640-GS04-3*8 | R808±3-Q1200-GS04-5*12 |
Center Wavelength λc(nm) | 808 | |
Wavelength Tolerance δλc(nm) | ±3 | |
Output power of each Bar(W) | 80 | 100 |
Bar Numbers | 8 | 12 |
Spaces between Bars(mm) | ~0.4 | |
Spectral Width(FWHM)(nm) | <5 | |
Slope Efficiency of each Bar (W/A) | >1.0 | |
Fast Axis Divergence Angle(FWHM)(°) | 40 | |
Slow Axis Divergence Angle(FWHM)(°) | 10 | |
Temperature Drift of Wavelength(nm/℃) | ~0.3 | |
Electrical Parameters | ||
Conversion Efficiency(%) | >48 | |
Threshold Current Ith(A) | <12 | <17 |
Operating Current Iop(A) | <85 | <130 |
Operating Voltage Vop of each Bar(V) | <2 | |
Duty Cycle(%) | <0.8 | |
Pulse Width(μs) | <300 | |
Repetition Rate(Hz) | <30 | |
Environment Parameters | ||
Operating Temperature(℃) | 0~45 | |
Storage Temperature(℃) | 0~55 |