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InGaAs PIN Photodiode


-. Peak sensitivities from 1.05 A/W to 1.45 A/W#
-. High dynamic range#
-. High linearity#
-. Low temperature coefficient of the sensitivity of up to 0.01%/K#
-. Panchromatic, i.e. sensitive in the Vis and NIR ranges
Application -. Spectroscopy (and NIR-FTIR in particular)#
-. Laser monitoring#
-. Non-contact temperature measurement#
-. Tunable diode laser spectroscopy (TDLS)#
-. Spectrophotometry, e.g. for measuring moisture#
-. Sorting applications#
-. Flame regulation
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Product Info



InGaAs 500 - 2600 nm PIN Photodiodes

 

 IR photodiodes with an emphasis on quantum efficiency: LASER COMPONENTS develops and manufactures photodiodes in the spectral range of up to 2600 nm.

 

 

 

Description

 


 The IG22 and IG26 series photodiodes feature a quantum efficiency that is approximately 15% higher than current state-of-the-art photodiodes.

 

Main Applications for IR Photodiodes:
 * Spectroscopy (and NIR-FTIR in particular)
 * Laser monitoring
 * Non-contact temperature measurement
 * Tunable diode laser spectroscopy (TDLS)
 * Spectrophotometry, e.g. for measuring moisture
 * Sorting applications
 * Flame regulation

 

Key Features Include the Following: 
 * Peak sensitivities from 1.05 A/W to 1.45 A/W
 * High dynamic range
 * High linearity
 * Low temperature coefficient of the sensitivity of up to 0.01%/K 
 * Panchromatic, i.e. sensitive in the Vis and NIR ranges

 

 


InGaAs and Extended InGaAs Photodiodes by Laser Components

 

 

LASER COMPONENTS produces photodiodes in house in Tempe, Arizona. They have been available on the market since 2013 and feature a strong cost-performance ratio.
 
The following series are available:
 * IG17 series (500-1700 nm)
 * IG22 series (500-2200 nm)
 * IG26 series (500-2600 nm)

 

 This product portfolio was designed with much attention to detail: At first glance, the wide spectral response and high sensitivity of the detectors are striking. In the IG22 and IG26 series, this is approximately 15% higher than the commercial standard. Further advantages include a lower temperature coefficient of the sensitivity and a reduced off-area sensitivity.  
 
 Active diameters from 0.25 mm to 3 mm are produced on a standard basis. They are available in hermetically-sealed TO housings with and without an integrated Peltier cooler, as an SMD component, on a ceramic mount, or simply as a chip.
 
 In addition to the otherwise standard sizes of 1 mm and 2 mm, we also have an in-between size available for the active area: it is 1.3 mm in diameter. This makes it possible to package the photodiode in a TO-46 housing (with a base diameter of 5.3 mm), which delivers 70% more signal at the same housing dimensions than a photodiode with an active area of 1 mm.
 
 Customer-specific versions are available, such as for example, with the hermetic integration of interference filters.
 
Laser Components’ InGaAs photodiodes are also available as digital sensor modules that can be implemented immediately.

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