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Infrared Photodiode Detectors with preamplifier Detectors we produce are the semiconductor photodiodes (PDs). PD heterostructure is formed by sequential epitaxy of semiconductor layers on the surface of a crystal substrate. Light is absorbed in the active layer of PD and the spectral response of the PD is determined by the energy gap of the material in the active layer. |
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Product Info
Models with preamplifier
All the photodiode models are available coupled with a preamplifier packaged in an aluminum tube with a parabolic reflector (LmsXXPD-XX-R-PA - without a window and LmsXXPD-XX-RW-PA with a window):Photodiode models with LMSNT preamplifier (-PA) work in photovoltaic mode (with zero bias). Current generated by photodiode is amplified and converted by preamplifier into voltage signal. There is straight correspondence between PD current and resulting output voltage. The signal converted by preamplifier will have the same form, frequency and pulse duration as the photocurrent signal from photodiode.
Photodiode models with LMSNT preamplifier (-PA) are equipped with parabolic reflector and packaged in an aluminum tube for protection and screening. Parabolic reflector protects PD device from damage and increases that part of the radiation that reaches the sensitive area of the photodiode.
For further signal amplification, conversion and synchronous detection of the signals from photodiodes with preamplifiers, we have developed the SDM synchronous detector. SDM synchronous detectors are tuned for optimal operation with LmsXXPD-XX-PA models and make the photodiodes with preamplifier signal measurement easy and convenient.