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Quadrant PIN Photodiodes


Small gap areas
Low dark current
High shunt resistance
High resolution
A special version for 1064 nm is also available
Application
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Product Info


아래 표의 제품 번호를 누르시면 Datasheet를 다운 받으 실 수 있습니다.


Quadrant PIN photodiodes (QP)

Quadrant photodiodes are discrete components that usually feature four optically active areas separated by a small gap. These photodiodes are used for detecting the position of laser beams, in collimators and many other adjustment applications.
 

Quadrant PIN photodiodes of First Sensor

Series 6 – low dark current

Technical specifications and PDF datasheet

Order #ChipPackageActive Area
Size (mm) /
Area (mm²)
Gap (µm)Dark current
(nA); 10 V
Capa-
citance
(pf); 10 V
Rise time (ns);
850 nm, 10 V, 50 Ω
5000029QP1-6TO52Ø 1.13 / 4x0.25160.1*120
3004334QP50-6TO8SØ 7.8 / 4x12.5422.0*2540

* per segment
 

Series Q – for 1064 nm

Technical specifications and PDF datasheet

Order #ChipPackageActive Area
Size (mm) /
Area (mm²)
Dark current
(nA); 150 V
Rise time (ns);
1064 nm, 180 V, 50 Ω
3001177QP22-QTO8SØ 5.3 / 4×5.71.5*12
3001275QP45-QTO8Si with heater6.7×6.7 / 4×10.968*12
3001386QP154-QTO1032iØ 14.0 / 4×38.510*12
3001433QP154-QTO1081i with heaterØ 14.0 / 4×38.510*12

* per segment



Evaluation boards (Modules)

Technical specifications and PDF datasheet

Order #ChipPackageActive Area
Size (mm) /
Area (mm²)
5000021QP45-QHVSD6.7×6.7 / 4×10.96
5000010QP50-6 (42 µm)SD2Ø 7.8 / 4×11.78
5000023QP154-QHVSDØ 14.0 / 4×38.5


Note:
Minimum order quantities may apply. Please do not hesitate to contact us.

Please contact us if you are interested in specific solutions for special applications.


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